We present 1.5 /spl mu/m CW GaInNAsSb/GaAs lasers with typical room temperature threshold densities below 600 A/cm/sup 2/, external efficiencies above 50% and output powers of 200 mW. Z-parameter measurements show these improvements are primarily due to reduced monomolecular recombination.


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    Titel :

    Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 /spl mu/m


    Beteiligte:
    Goddard, L.L. (Autor:in) / Bank, S.S. (Autor:in) / Wistey, M.A. (Autor:in) / Yuen, H.B. (Autor:in) / Bae, H.P. (Autor:in) / Harris, J.S. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    151308 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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