The temperature behavior of 1.5 /spl mu/m GaInNAsSb edge-emitting lasers is analyzed through variation of cavity length and temperature. Monomolecular recombination and intervalence band absorption dominate the threshold current, and carrier leakage becomes important at elevated temperatures.


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    Titel :

    The temperature sensitivity of GaAs-based 1.5 /spl mu/m GaInNAsSb lasers


    Beteiligte:
    Bank, S.R. (Autor:in) / Goddard, L.L. (Autor:in) / Wistey, M.A. (Autor:in) / Yuen, H.B. (Autor:in) / Harris, J.S. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    135778 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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