The temperature behavior of 1.5 /spl mu/m GaInNAsSb edge-emitting lasers is analyzed through variation of cavity length and temperature. Monomolecular recombination and intervalence band absorption dominate the threshold current, and carrier leakage becomes important at elevated temperatures.
The temperature sensitivity of GaAs-based 1.5 /spl mu/m GaInNAsSb lasers
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 4 pp. vol.1
2004-01-01
135778 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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