In this paper, InGaAsP/InP APDs is designed for detection of near infrared (1-1.5 /spl mu/m wavelength) light and GaN APDs designed for detection of ultraviolet (<365 nm wavelength) light. This paper will also describe ladar measurements which use arrays of G-M APDs matched with timing circuits to produce 3D images with near-infrared photons.
Arrays of III-V semiconductor Geiger-mode avalanche photodiodes
2003-01-01
152302 byte
Conference paper
Electronic Resource
English
Arrays of III-V Semiconductor Geiger-mode Avalanche Photodiodes
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