In this paper, InGaAsP/InP APDs is designed for detection of near infrared (1-1.5 /spl mu/m wavelength) light and GaN APDs designed for detection of ultraviolet (<365 nm wavelength) light. This paper will also describe ladar measurements which use arrays of G-M APDs matched with timing circuits to produce 3D images with near-infrared photons.


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    Title :

    Arrays of III-V semiconductor Geiger-mode avalanche photodiodes


    Contributors:
    Mclntosh, K.A. (author) / Donnelly, J.P. (author) / Oakley, D.C. (author) / Napoleone, A. (author) / Calawa, S.D. (author) / Mahoney, L.J. (author) / Molvar, K.M. (author) / Mahan, J. (author) / Molnar, R.J. (author) / Duerr, E.K. (author)


    Publication date :

    2003-01-01


    Size :

    152302 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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