In this paper, InGaAsP/InP APDs is designed for detection of near infrared (1-1.5 /spl mu/m wavelength) light and GaN APDs designed for detection of ultraviolet (<365 nm wavelength) light. This paper will also describe ladar measurements which use arrays of G-M APDs matched with timing circuits to produce 3D images with near-infrared photons.


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    Titel :

    Arrays of III-V semiconductor Geiger-mode avalanche photodiodes


    Beteiligte:
    Mclntosh, K.A. (Autor:in) / Donnelly, J.P. (Autor:in) / Oakley, D.C. (Autor:in) / Napoleone, A. (Autor:in) / Calawa, S.D. (Autor:in) / Mahoney, L.J. (Autor:in) / Molvar, K.M. (Autor:in) / Mahan, J. (Autor:in) / Molnar, R.J. (Autor:in) / Duerr, E.K. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    152302 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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