We show that it is possible to extract the intrinsic well lifetime and therefore the intrinsic recombination parameters from the measured carrier lifetime and spontaneous emission spectra of an InAsP-InGaAsP MQW laser. This method is based on a small signal solution to the rate equations for QW lasers which includes separate carrier levels for both the QW and barrier/SCH regions.


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    Title :

    Intrinsic recombination coefficients in quantum well semiconductor lasers


    Contributors:
    Pikal, J.M. (author) / Menoni, C.S. (author) / Temkin, H. (author) / Thiagarajan, P. (author) / Robinson, G.Y. (author)


    Publication date :

    1999-01-01


    Size :

    160720 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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