We show that it is possible to extract the intrinsic well lifetime and therefore the intrinsic recombination parameters from the measured carrier lifetime and spontaneous emission spectra of an InAsP-InGaAsP MQW laser. This method is based on a small signal solution to the rate equations for QW lasers which includes separate carrier levels for both the QW and barrier/SCH regions.
Intrinsic recombination coefficients in quantum well semiconductor lasers
1999-01-01
160720 byte
Conference paper
Electronic Resource
English
Intrinsic Recombination Coefficients in Quantum Well Semiconductor Lasers
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