We show that it is possible to extract the intrinsic well lifetime and therefore the intrinsic recombination parameters from the measured carrier lifetime and spontaneous emission spectra of an InAsP-InGaAsP MQW laser. This method is based on a small signal solution to the rate equations for QW lasers which includes separate carrier levels for both the QW and barrier/SCH regions.


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    Titel :

    Intrinsic recombination coefficients in quantum well semiconductor lasers


    Beteiligte:
    Pikal, J.M. (Autor:in) / Menoni, C.S. (Autor:in) / Temkin, H. (Autor:in) / Thiagarajan, P. (Autor:in) / Robinson, G.Y. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    160720 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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