ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ([001] and [111]), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Atomic layer epitaxy of ZnO for substrates for GaN epitaxy


    Contributors:


    Publication date :

    2002-01-01


    Size :

    295793 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Atomic Layer Epitaxy of ZnO for Substrates for GaN Epitaxy

    Godlewski, M. / Szczerbakow, A. / Kopalko, K. et al. | British Library Conference Proceedings | 2002


    Formation of Low-Dimensional Structures by Atomic Layer Epitaxy

    Isshiki, H. / Aoyagi, Y. / Sugano, T. et al. | British Library Online Contents | 1993



    Vapor phase epitaxy of ZnTe on silicon substrates

    Bhat, Ishwara B. / Wang, Wen-Sheng / Trivedi, Sudhir B. et al. | SPIE | 1993


    Multi-Wavelength Laser Array by Chemical Beam Epitaxy on Patterned InP Substrates

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993