ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ([001] and [111]), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.
Atomic layer epitaxy of ZnO for substrates for GaN epitaxy
01.01.2002
295793 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Atomic Layer Epitaxy of ZnO for Substrates for GaN Epitaxy
British Library Conference Proceedings | 2002
|Novel Substrates for GaN Epitaxy
IEEE | 1998
|Formation of Low-Dimensional Structures by Atomic Layer Epitaxy
British Library Online Contents | 1993
|InP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substrates
Online Contents | 1995
|