ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ([001] and [111]), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.


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    Titel :

    Atomic layer epitaxy of ZnO for substrates for GaN epitaxy


    Beteiligte:
    Godlewski, M. (Autor:in) / Szczerbakow, A. (Autor:in) / Kopalko, K. (Autor:in) / Lusakowska, E. (Autor:in) / Butcher, K.S.A. (Autor:in) / Goldys, E.M. (Autor:in) / Tansley, T.L. (Autor:in) / Barski, A. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    295793 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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