The uniqueness of the nitrides for detectors lies in their wide bandgaps that can be tailored by varying the composition of the quaternary alloy AlInGaN. We report on the performance of GaN PIN photodiodes grown by MOVPE with various intrinsic region thicknesses.


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    Title :

    Visible-blind GaN PIN photodiodes


    Contributors:
    Smith, G.M. (author) / Boutros, K.S. (author) / Phanse, V.M. (author) / Chriss, M.F. (author) / Tamweber, F.D. (author)


    Publication date :

    1998-01-01


    Size :

    157335 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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