The uniqueness of the nitrides for detectors lies in their wide bandgaps that can be tailored by varying the composition of the quaternary alloy AlInGaN. We report on the performance of GaN PIN photodiodes grown by MOVPE with various intrinsic region thicknesses.
Visible-blind GaN PIN photodiodes
1998-01-01
157335 byte
Conference paper
Electronic Resource
English
Visible-Blind GaN PIN Photodiodes
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