Summary form only given. In order to optimize the brightness of these diode lasers, the dependence of the linewidth enhancement factor and of the beam quality on the device structure parameters was investigated. The active In/sub 0.12/Ga/sub 0.88/As quantum well with a thickness of 7 nm is embedded in Al/sub 0.2/Ga/sub 0.8/As waveguides and Al/sub 0.4/Ga/sub 0.6/As cladding layers.


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    Title :

    Beam quality and linewidth enhancement factor of ridge-waveguide tapered diode lasers


    Contributors:
    Kelemen, M.T. (author) / Weber, J. (author) / Rogg, J. (author) / Rinner, F. (author) / Mikulla, M. (author) / Weimann, G. (author)


    Publication date :

    2002-01-01


    Size :

    110946 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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