Summary form only given. A high-performance camera, based on a 320/spl times/240 element array of indium gallium arsenide (In/sub .53/Ga/sub .47/As) photodiodes, has been specially fabricated to allow detection of light from the visible through the near infrared (0.5 /spl mu/m to 1.7 /spl mu/m). The overall structures of the starting epitaxial wafers and the final focal plane array are shown.


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    Title :

    Substrate-thinned indium gallium arsenide/indium phosphide focal plane arrays for imaging from the visible through the near infrared


    Contributors:
    Lange, M.J. (author) / Ettenberg, M.H. (author) / Olsen, G.H. (author) / Vermaak, J.S. (author) / Cohen, M.J. (author) / Sugg, A.R. (author) / Forrest, S.R. (author) / Dries, J.C. (author)


    Publication date :

    1999-01-01


    Size :

    180896 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Commercial and industrial applications of indium gallium arsenide near-infrared focal plane arrays [3698-55]

    Cohen, M. J. / Ettenberg, M. H. / Lange, M. J. et al. | British Library Conference Proceedings | 1999



    Indium gallium arsenide handles broad task spectrum in near infrared

    Ettenberg, M. H. / Brubaker, R. M. | British Library Online Contents | 2002