Summary form only given. A high-performance camera, based on a 320/spl times/240 element array of indium gallium arsenide (In/sub .53/Ga/sub .47/As) photodiodes, has been specially fabricated to allow detection of light from the visible through the near infrared (0.5 /spl mu/m to 1.7 /spl mu/m). The overall structures of the starting epitaxial wafers and the final focal plane array are shown.


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    Titel :

    Substrate-thinned indium gallium arsenide/indium phosphide focal plane arrays for imaging from the visible through the near infrared


    Beteiligte:
    Lange, M.J. (Autor:in) / Ettenberg, M.H. (Autor:in) / Olsen, G.H. (Autor:in) / Vermaak, J.S. (Autor:in) / Cohen, M.J. (Autor:in) / Sugg, A.R. (Autor:in) / Forrest, S.R. (Autor:in) / Dries, J.C. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    180896 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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