ZnO films were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire and Si substrate. Thermal annealing was performed on ZnO thin films deposited on Si substrate. X-ray diffraction spectra indicated that all ZnO films were strongly c-oriented. Strong ultraviolet (UV) emission was observed. X-ray photoelectron spectroscopy (XPS) measurements were performed to confirm the stoichiometry of ZnO film. Optical pumped UV lasing was obtained at room temperature. N-doped ZnO samples were realized by ionizing N/sub 2/ and NH/sub 3/. High resistive ZnO films were obtained by N-doping.


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    Title :

    ZnO thin films grown by plasma-assisted metal-organic vapor phase epitaxy


    Contributors:
    Guotong Du, (author) / Yuantao Zhang, (author) / Yan Ma, (author) / Xiaotian Yang, (author) / Baijun Zhao, (author) / Boyang Liu, (author)


    Publication date :

    2003-01-01


    Size :

    265820 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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