ZnO films were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire and Si substrate. Thermal annealing was performed on ZnO thin films deposited on Si substrate. X-ray diffraction spectra indicated that all ZnO films were strongly c-oriented. Strong ultraviolet (UV) emission was observed. X-ray photoelectron spectroscopy (XPS) measurements were performed to confirm the stoichiometry of ZnO film. Optical pumped UV lasing was obtained at room temperature. N-doped ZnO samples were realized by ionizing N/sub 2/ and NH/sub 3/. High resistive ZnO films were obtained by N-doping.
ZnO thin films grown by plasma-assisted metal-organic vapor phase epitaxy
2003-01-01
265820 byte
Conference paper
Electronic Resource
English
ZnO Thin Films Grown by Plasma-assisted Metal-organic Vapor Phase Epitaxy
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