ZnO films were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire and Si substrate. Thermal annealing was performed on ZnO thin films deposited on Si substrate. X-ray diffraction spectra indicated that all ZnO films were strongly c-oriented. Strong ultraviolet (UV) emission was observed. X-ray photoelectron spectroscopy (XPS) measurements were performed to confirm the stoichiometry of ZnO film. Optical pumped UV lasing was obtained at room temperature. N-doped ZnO samples were realized by ionizing N/sub 2/ and NH/sub 3/. High resistive ZnO films were obtained by N-doping.


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    Titel :

    ZnO thin films grown by plasma-assisted metal-organic vapor phase epitaxy


    Beteiligte:
    Guotong Du, (Autor:in) / Yuantao Zhang, (Autor:in) / Yan Ma, (Autor:in) / Xiaotian Yang, (Autor:in) / Baijun Zhao, (Autor:in) / Boyang Liu, (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    265820 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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