The basic structure of a triple microstack laser is shown. Each independent laser consists ofa conventional LOC-SCH-structure with an AlInGaAs-AlInAs double quantum well as active layer designed for an emission wavelength around 808 nm. By optimizing the MOVPE growth process tunnel-junctions with a specific differential resistivity could be obtained which were suitable for the monolithic interconnection of the laser structures.


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    Title :

    High-power AlInGaAs-GaAs double and triple microstack lasers at 808 nm


    Contributors:
    Hanke, C. (author) / Korte, L. (author) / Acklin, B. (author) / Behringer, M. (author) / Luft, J. (author)


    Publication date :

    1999-01-01


    Size :

    142422 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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