The basic structure of a triple microstack laser is shown. Each independent laser consists ofa conventional LOC-SCH-structure with an AlInGaAs-AlInAs double quantum well as active layer designed for an emission wavelength around 808 nm. By optimizing the MOVPE growth process tunnel-junctions with a specific differential resistivity could be obtained which were suitable for the monolithic interconnection of the laser structures.


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    Titel :

    High-power AlInGaAs-GaAs double and triple microstack lasers at 808 nm


    Beteiligte:
    Hanke, C. (Autor:in) / Korte, L. (Autor:in) / Acklin, B. (Autor:in) / Behringer, M. (Autor:in) / Luft, J. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    142422 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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