The basic structure of a triple microstack laser is shown. Each independent laser consists ofa conventional LOC-SCH-structure with an AlInGaAs-AlInAs double quantum well as active layer designed for an emission wavelength around 808 nm. By optimizing the MOVPE growth process tunnel-junctions with a specific differential resistivity could be obtained which were suitable for the monolithic interconnection of the laser structures.
High-power AlInGaAs-GaAs double and triple microstack lasers at 808 nm
01.01.1999
142422 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High-power AlInGaAs/GaAs double and triple microstack lasers at 808nm
British Library Conference Proceedings | 1999
|British Library Conference Proceedings | 1996
|AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]
British Library Conference Proceedings | 1996
|