This paper describes an integrated frequency multiplier, implemented as a Gilbert cell based frequency doubler in a 130 nm SiGe BiCMOS technology. The circuit demonstrates a 3 dB bandwidth of 97–134GHz with peak output power of 1 dBm for 1 dBm input power. The fundamental suppression, measured at the single-ended output, is better than 21 dBc while the frequency doubler consumes 69mW from a 3.3V supply. The doubler is preceded by a differential amplifier functioning as an active balun to generate a differential signal for the Gilbert cell.
An integrated 122GHz differential frequency doubler with 37GHz bandwidth in 130 nm SiGe BiCMOS technology
2017-03-01
342767 byte
Conference paper
Electronic Resource
English
Noise Behaviour in SiGe BiCMOS Technology
British Library Conference Proceedings | 2000
|Cryogenic operation of SiGe BiCMOS voltage references
Tema Archive | 2006
|Collector Resistance of Accumulation-Subcollector Transistors for SOI SiGe BiCMOS Technology
British Library Conference Proceedings | 2012
|