GaNAs strain compensating layers have been used to obtain 1.5 /spl mu/m luminescence from InAs quantum dots, and this fundamental scheme was demonstrated with light emitting diodes operating at room temperature.
InAs-quantum-dots-based light emitting diodes with GaNAs strain-compensating layers
2002-01-01
139190 byte
Conference paper
Electronic Resource
English
InAs-Quantum-Dots-Based Light Emitting Diodes with GaNAs Strain-Compensating Layers
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