GaNAs strain compensating layers have been used to obtain 1.5 /spl mu/m luminescence from InAs quantum dots, and this fundamental scheme was demonstrated with light emitting diodes operating at room temperature.


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    Title :

    InAs-quantum-dots-based light emitting diodes with GaNAs strain-compensating layers


    Contributors:
    Kurimoto, M. (author) / Ganapathy, S. (author) / Zhang, X.Q. (author) / Uesugi, K. (author) / Kumano, H. (author) / Suemune, I. (author)


    Publication date :

    2002-01-01


    Size :

    139190 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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