GaNAs strain compensating layers have been used to obtain 1.5 /spl mu/m luminescence from InAs quantum dots, and this fundamental scheme was demonstrated with light emitting diodes operating at room temperature.
InAs-quantum-dots-based light emitting diodes with GaNAs strain-compensating layers
01.01.2002
139190 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
InAs-Quantum-Dots-Based Light Emitting Diodes with GaNAs Strain-Compensating Layers
British Library Conference Proceedings | 2002
|MOCVD growth of InAs/GaAs quantum dots and laser diodes
IEEE | 2004
|British Library Online Contents | 2018
|Modeling and studying of white light emitting diodes based on CdS/ZnS spherical quantum dots
British Library Online Contents | 2018
|British Library Online Contents | 2018
|