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    Titel :

    InAs-Quantum-Dots-Based Light Emitting Diodes with GaNAs Strain-Compensating Layers



    Kongress:

    18th, International semiconductor laser conference ; 2002 ; Garmisch-partenkirchen, Germany



    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    2 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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