To utilize high efficiency, high speed compound CMOS semiconductor circuits with silicon circuitry, and to relax the circuit design constraints which are imposed by 50 W terminations, we report herein the integration of a double heterostructure GaAs-based high efficiency inverted (fingers on the bottom) metal-semiconductor-metal (I-MSM) thin film photodetector bonded directly onto the silicon receiver circuit.


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    Title :

    CMOS optical receiver with integrated compound semiconductor thin-film inverted MSM detector operating at 155 Mbps


    Contributors:
    Myunghee Lee (author) / Vendier, O. (author) / Brooke, M.A. (author) / Jokerst, N.M. (author) / Leavitt, R.P. (author)


    Publication date :

    1995-01-01


    Size :

    197877 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    CMOS Optical Receiver with Integrated Compound Semiconductor Thin-Film Inverted MSM Detector Operating at 155 Mbps

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995



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    IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society | British Library Conference Proceedings | 1994


    Silicon CMOS optical receiver circuits with integrated thin-film compound semiconductor detectors [2400-37]

    Brooke, M. A. / Lee, M. / Jokerst, N. et al. | British Library Conference Proceedings | 1995