To utilize high efficiency, high speed compound CMOS semiconductor circuits with silicon circuitry, and to relax the circuit design constraints which are imposed by 50 W terminations, we report herein the integration of a double heterostructure GaAs-based high efficiency inverted (fingers on the bottom) metal-semiconductor-metal (I-MSM) thin film photodetector bonded directly onto the silicon receiver circuit.
CMOS optical receiver with integrated compound semiconductor thin-film inverted MSM detector operating at 155 Mbps
1995-01-01
197877 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1995
|British Library Conference Proceedings | 1994
|British Library Conference Proceedings | 1995
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