To utilize high efficiency, high speed compound CMOS semiconductor circuits with silicon circuitry, and to relax the circuit design constraints which are imposed by 50 W terminations, we report herein the integration of a double heterostructure GaAs-based high efficiency inverted (fingers on the bottom) metal-semiconductor-metal (I-MSM) thin film photodetector bonded directly onto the silicon receiver circuit.


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    Titel :

    CMOS optical receiver with integrated compound semiconductor thin-film inverted MSM detector operating at 155 Mbps


    Beteiligte:
    Myunghee Lee (Autor:in) / Vendier, O. (Autor:in) / Brooke, M.A. (Autor:in) / Jokerst, N.M. (Autor:in) / Leavitt, R.P. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    197877 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    CMOS Optical Receiver with Integrated Compound Semiconductor Thin-Film Inverted MSM Detector Operating at 155 Mbps

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995



    Silicon CMOS Optical Receiver Circuit with Integrated Compound Semiconductor Thin-Film P-i-N detector

    IEEE; Lasers and Electro-Optics Society / IEEE; Electron Devices Society | British Library Conference Proceedings | 1994


    Silicon CMOS optical receiver circuits with integrated thin-film compound semiconductor detectors [2400-37]

    Brooke, M. A. / Lee, M. / Jokerst, N. et al. | British Library Conference Proceedings | 1995