In this paper we present a computationally efficient way of evaluating carrier escape time from a single quantum-well under an arbitrarily strong reverse bias. Quantum-well saturable absorbers attract considerable attention as they are crucial in the operation of picosecond semiconductor lasers. Our model treats both tunnelling and thermionic emission processes on the same footing. The model can be generalised for either type of carriers and nonequilibrium carrier distributions.
Accurate calculation of carrier escape time from reverse-biased quantum-well saturable absorbers
2003-01-01
66508 byte
Conference paper
Electronic Resource
English
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