For the first time, an integrated mode-locked laser diode (MLLD) with different materials for gain and absorber is realized. The MLLD with uni-traveling-carrier absorber produces 600 fs pulses, compared to 3 ps for all multi-quantum well devices.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Comparison of monolithically integrated mode-locked laser diodes with uni-traveling carrier and multi-quantum well saturable absorbers


    Contributors:
    Lohe, H.-J. (author) / Scollo, R. (author) / Holzman, J.F. (author) / Robin, F. (author) / Erni, D. (author) / Vogt, W. (author) / Gini, E. (author) / Jackel, H. (author)


    Publication date :

    2005-01-01


    Size :

    171486 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Development of Passively Mode-Locked Erbium-Doped Fiber Lasers Using Multiple Quantum Well Saturable Absorbers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Properties of InGaAs Quantum Dot Saturable Absorbers in Monolithic Mode-Locked Lasers

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004


    Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    Thompson, M.G. / Marinelli, C. / Chu, Y. et al. | IEEE | 2004


    Passively mode-locked picosecond erbium-doped fiber lasers using multiple quantum well saturable absorbers (Invited Paper) [3384-01]

    Hayduk, M. J. / Krol, M. F. / Pollock, C. R. et al. | British Library Conference Proceedings | 1998