We report on the demonstration of non-thermal, high-speed microstructure fabrication of GaN and Si substrates using high-intensity femtosecond laser at 800 nm and at repetition rate of 1 kpps. We focus on the etching characteristic of wide-band gap GaN and low-band gap Si.
Microstructure fabrication of GaN and Si substrates using intense femtosecond laser
2001-01-01
223875 byte
Conference paper
Electronic Resource
English
ThM4 Microstructure Fabrication of GaN and Si Substrates using Intense Femtosecond Laser
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