We report on the demonstration of non-thermal, high-speed microstructure fabrication of GaN and Si substrates using high-intensity femtosecond laser at 800 nm and at repetition rate of 1 kpps. We focus on the etching characteristic of wide-band gap GaN and low-band gap Si.


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    Title :

    Microstructure fabrication of GaN and Si substrates using intense femtosecond laser


    Contributors:
    Ozono, K. (author) / Obara, M. (author)


    Publication date :

    2001-01-01


    Size :

    223875 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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