We report on the demonstration of non-thermal, high-speed microstructure fabrication of GaN and Si substrates using high-intensity femtosecond laser at 800 nm and at repetition rate of 1 kpps. We focus on the etching characteristic of wide-band gap GaN and low-band gap Si.


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    Titel :

    Microstructure fabrication of GaN and Si substrates using intense femtosecond laser


    Beteiligte:
    Ozono, K. (Autor:in) / Obara, M. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    223875 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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