We report on the demonstration of non-thermal, high-speed microstructure fabrication of GaN and Si substrates using high-intensity femtosecond laser at 800 nm and at repetition rate of 1 kpps. We focus on the etching characteristic of wide-band gap GaN and low-band gap Si.
Microstructure fabrication of GaN and Si substrates using intense femtosecond laser
01.01.2001
223875 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
ThM4 Microstructure Fabrication of GaN and Si Substrates using Intense Femtosecond Laser
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