Nonlinearity of the material gain coefficient is taken into consideration in a selfconsistent beam-propagation model for InGaAs-GaAs QW semiconductor travelling-wave laser amplifiers. The device gain saturation is analyzed under the nonlinear correction.
Influences of gain coefficient nonlinearity on the operating characteristics of semiconductor traveling-wave amplifiers
1995-01-01
182494 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1995
|Evaluation of Gain Saturation Behavior in Traveling Wave Semiconductor Amplifiers
British Library Conference Proceedings | 1996
|Chirped Pulse Propogation in Saturated Traveling Wave Semiconductor Amplifiers
British Library Conference Proceedings | 1999
|Traveling-wave superconducting parametric amplifiers
NTRS | 2018
|