Nonlinearity of the material gain coefficient is taken into consideration in a selfconsistent beam-propagation model for InGaAs-GaAs QW semiconductor travelling-wave laser amplifiers. The device gain saturation is analyzed under the nonlinear correction.


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    Title :

    Influences of gain coefficient nonlinearity on the operating characteristics of semiconductor traveling-wave amplifiers


    Contributors:
    Zheng Dai (author) / Michalzik, R. (author) / Unger, P. (author) / Ebeling, K.J. (author)


    Publication date :

    1995-01-01


    Size :

    182494 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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