Nonlinearity of the material gain coefficient is taken into consideration in a selfconsistent beam-propagation model for InGaAs-GaAs QW semiconductor travelling-wave laser amplifiers. The device gain saturation is analyzed under the nonlinear correction.


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    Titel :

    Influences of gain coefficient nonlinearity on the operating characteristics of semiconductor traveling-wave amplifiers


    Beteiligte:
    Zheng Dai (Autor:in) / Michalzik, R. (Autor:in) / Unger, P. (Autor:in) / Ebeling, K.J. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    182494 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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