We have demonstrated that Raman micro-probe has a better resolution than that of photoluminescence measurements in resolving GaAs-AlGaAs heterostructure intermixing. The technique is therefore suitable for characterising high resolution QWI processes.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Characterisation of the resolution of impurity free vacancy disordering in GaAs-AlGaAs using Raman and photoluminescence correlation measurements


    Contributors:
    Saher Helmy, A. (author) / Bryce, A.C. (author) / Ironside, C.N. (author) / Aitchison, J.S. (author) / Marsh, J.H. (author) / Gontijo, I. (author) / Buller, G.S. (author) / Karlin, S. (author) / Wilcock, I. (author)


    Publication date :

    1998-01-01


    Size :

    146513 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Kinetics of impurity free vacancy disordering in GaAs/AlGaAs heterostructures

    Saher Helmy, A. / Aitchison, J.S. / Marsh, J.H. | IEEE | 1997


    Kinetics of Impurity Free Vacancy Disordering in GaAs/AlGaAs Heterostructures

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    GaAs/AlGaAs photonic integrated circuits fabricated using impurity-free vacancy disordering (Invited Paper) [2401-27]

    Marsh, J. H. / Cusumano, P. / Bryce, A. C. et al. | British Library Conference Proceedings | 1995


    Deep Levels Induced by Impurity Free Vacancy Disordering

    Johnson, N.P. / Helmy, A.S. / Bryce, A.C. et al. | IEEE | 1998