We have demonstrated that Raman micro-probe has a better resolution than that of photoluminescence measurements in resolving GaAs-AlGaAs heterostructure intermixing. The technique is therefore suitable for characterising high resolution QWI processes.


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    Titel :

    Characterisation of the resolution of impurity free vacancy disordering in GaAs-AlGaAs using Raman and photoluminescence correlation measurements


    Beteiligte:
    Saher Helmy, A. (Autor:in) / Bryce, A.C. (Autor:in) / Ironside, C.N. (Autor:in) / Aitchison, J.S. (Autor:in) / Marsh, J.H. (Autor:in) / Gontijo, I. (Autor:in) / Buller, G.S. (Autor:in) / Karlin, S. (Autor:in) / Wilcock, I. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    146513 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Kinetics of impurity free vacancy disordering in GaAs/AlGaAs heterostructures

    Saher Helmy, A. / Aitchison, J.S. / Marsh, J.H. | IEEE | 1997


    Kinetics of Impurity Free Vacancy Disordering in GaAs/AlGaAs Heterostructures

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    GaAs/AlGaAs photonic integrated circuits fabricated using impurity-free vacancy disordering (Invited Paper) [2401-27]

    Marsh, J. H. / Cusumano, P. / Bryce, A. C. et al. | British Library Conference Proceedings | 1995


    Deep Levels Induced by Impurity Free Vacancy Disordering

    Johnson, N.P. / Helmy, A.S. / Bryce, A.C. et al. | IEEE | 1998