Despite the increasing use of the technology of intermixing of quantum confined heterostructures to fabricate optoelectronic and photonic integrated circuits, the majority of research to date has been directed at experimental investigations of the processes. Although the concept was first reported in 1981 no comprehensive mechanism of the process was presented until 1988. The model described here allows a non-equilibrium group III vacancy concentration in a GaAs-AlGaAs heterostructure to be related to the amount of intermixing induced during subsequent annealing.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Kinetics of impurity free vacancy disordering in GaAs/AlGaAs heterostructures


    Beteiligte:
    Saher Helmy, A. (Autor:in) / Aitchison, J.S. (Autor:in) / Marsh, J.H. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    161773 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Kinetics of Impurity Free Vacancy Disordering in GaAs/AlGaAs Heterostructures

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    GaAs/AlGaAs photonic integrated circuits fabricated using impurity-free vacancy disordering (Invited Paper) [2401-27]

    Marsh, J. H. / Cusumano, P. / Bryce, A. C. et al. | British Library Conference Proceedings | 1995




    Deep Levels Induced by Impurity Free Vacancy Disordering

    Johnson, N.P. / Helmy, A.S. / Bryce, A.C. et al. | IEEE | 1998