An avalanche photodiode (APD) without guard rings is described. Single growth InP-InGaAs separate absorption grading charge sheet multiplication (SAGCM) APDs has been fabricated to suppress the edge breakdown. A very low dark current of 0.77 nA at 0.98 of the breakdown voltage (V/sub B/) and M=90 at 1.5 /spl mu/A of primary photocurrent was measured for a 50 /spl mu/m-diameter device. The gain-bandwidth product was estimated 64 GHz.
Fabrication of planar InP/InGaAs avalanche photodiode without guard rings
1996-01-01
194384 byte
Conference paper
Electronic Resource
English
Fabrication of Planar InP/InGaAs Avalanche Photodiode without Guard Rings
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