An avalanche photodiode (APD) without guard rings is described. Single growth InP-InGaAs separate absorption grading charge sheet multiplication (SAGCM) APDs has been fabricated to suppress the edge breakdown. A very low dark current of 0.77 nA at 0.98 of the breakdown voltage (V/sub B/) and M=90 at 1.5 /spl mu/A of primary photocurrent was measured for a 50 /spl mu/m-diameter device. The gain-bandwidth product was estimated 64 GHz.


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    Title :

    Fabrication of planar InP/InGaAs avalanche photodiode without guard rings


    Contributors:
    Kim, D.S. (author) / Lee, S.Y. (author) / Lee, J.H. (author) / Oh, G.S. (author) / Kim, N.J. (author) / Lee, J.W. (author) / Kim, A.S. (author) / Sin, Y.K. (author)


    Publication date :

    1996-01-01


    Size :

    194384 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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