An avalanche photodiode (APD) without guard rings is described. Single growth InP-InGaAs separate absorption grading charge sheet multiplication (SAGCM) APDs has been fabricated to suppress the edge breakdown. A very low dark current of 0.77 nA at 0.98 of the breakdown voltage (V/sub B/) and M=90 at 1.5 /spl mu/A of primary photocurrent was measured for a 50 /spl mu/m-diameter device. The gain-bandwidth product was estimated 64 GHz.


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    Titel :

    Fabrication of planar InP/InGaAs avalanche photodiode without guard rings


    Beteiligte:
    Kim, D.S. (Autor:in) / Lee, S.Y. (Autor:in) / Lee, J.H. (Autor:in) / Oh, G.S. (Autor:in) / Kim, N.J. (Autor:in) / Lee, J.W. (Autor:in) / Kim, A.S. (Autor:in) / Sin, Y.K. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    194384 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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