By solid-immersion photoluminescence imaging and spectroscopy, the spatial distribution of electronic states and carrier distribution and flow in GaAs facet-growth nano-structures and [110] quantum wells can been revealed with high-spatial resolution of sub-/spl mu/m scale.


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    Title :

    Solid-immersion photoluminescence microscopy of novel GaAs nano-structures


    Contributors:
    Yoshita, M. (author) / Akiyama, H. (author)


    Publication date :

    2001-01-01


    Size :

    149865 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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