By solid-immersion photoluminescence imaging and spectroscopy, the spatial distribution of electronic states and carrier distribution and flow in GaAs facet-growth nano-structures and [110] quantum wells can been revealed with high-spatial resolution of sub-/spl mu/m scale.
Solid-immersion photoluminescence microscopy of novel GaAs nano-structures
2001-01-01
149865 byte
Conference paper
Electronic Resource
English
Solid-Immersion Photoluminescence Microscopy of Novel GaAs Nano-Structures
British Library Conference Proceedings | 2001
|Photoreflectance and photoluminescence of InGaAs/GaAs structures [3179-22]
British Library Conference Proceedings | 1996
|Solid Immersion Lenses in Planar Waveguides
British Library Online Contents | 2005
|British Library Conference Proceedings | 1994
|