By solid-immersion photoluminescence imaging and spectroscopy, the spatial distribution of electronic states and carrier distribution and flow in GaAs facet-growth nano-structures and [110] quantum wells can been revealed with high-spatial resolution of sub-/spl mu/m scale.
Solid-immersion photoluminescence microscopy of novel GaAs nano-structures
01.01.2001
149865 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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