By solid-immersion photoluminescence imaging and spectroscopy, the spatial distribution of electronic states and carrier distribution and flow in GaAs facet-growth nano-structures and [110] quantum wells can been revealed with high-spatial resolution of sub-/spl mu/m scale.


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    Titel :

    Solid-immersion photoluminescence microscopy of novel GaAs nano-structures


    Beteiligte:
    Yoshita, M. (Autor:in) / Akiyama, H. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    149865 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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