Two-dimensional (2D) plasmon in a submicron transistor channel can make resonant oscillation in the terahertz range. We propose a novel terahertz plasma-wave photomixer that can improve the conversion gain and terahertz radiation power. The photomixer is based on a high-electron mobility transistor (HEMT) and incorporates doubly interdigitated grating strips for the gate electrodes that periodically localize the 2D plasmons in sub 100-nm regions with a micron-order interval. A vertical cavity structure is formed in between the top metal grating and a terahertz mirror placed at the backside. FDTD simulation demonstrates that a newly-introduced vertical cavity structure effectively enhances the conversion gain and radiation power.


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    Title :

    A novel terahertz plasma-wave photomixer with resonant-cavity enhanced structure


    Contributors:
    Otsuji, T. (author) / Hanabe, M. (author) / Shigenobu, J. (author) / Takahashi, S. (author) / Sano, E. (author)


    Publication date :

    2004-01-01


    Size :

    179411 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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