Two-dimensional (2D) plasmon in a submicron transistor channel can make resonant oscillation in the terahertz range. We propose a novel terahertz plasma-wave photomixer that can improve the conversion gain and terahertz radiation power. The photomixer is based on a high-electron mobility transistor (HEMT) and incorporates doubly interdigitated grating strips for the gate electrodes that periodically localize the 2D plasmons in sub 100-nm regions with a micron-order interval. A vertical cavity structure is formed in between the top metal grating and a terahertz mirror placed at the backside. FDTD simulation demonstrates that a newly-introduced vertical cavity structure effectively enhances the conversion gain and radiation power.


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    Titel :

    A novel terahertz plasma-wave photomixer with resonant-cavity enhanced structure


    Beteiligte:
    Otsuji, T. (Autor:in) / Hanabe, M. (Autor:in) / Shigenobu, J. (Autor:in) / Takahashi, S. (Autor:in) / Sano, E. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    179411 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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