The presence of defects inside the cavity of a semiconductor laser can have a very strong influence on the emission spectrum. The resulting output spectrum can become highly modulated even in the presence of a single defect. By carefully positioning a limited number of defects, for example by etching slots into a ridge waveguide laser it is even possible to achieve quasisingle longitudinal-mode operation. Here we show that by a straightforward Fourier analysis of a sub-threshold laser spectrum we can extract the complex reflectivities of an internal scatterer.
Reflectivity measurements of internal cavity defects in semiconductor laser diodes
2003-01-01
125366 byte
Conference paper
Electronic Resource
English
Reflectivity Measurements of Internal Cavity Defects in Semiconductor Laser Diodes
British Library Conference Proceedings | 2003
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