The presence of defects inside the cavity of a semiconductor laser can have a very strong influence on the emission spectrum. The resulting output spectrum can become highly modulated even in the presence of a single defect. By carefully positioning a limited number of defects, for example by etching slots into a ridge waveguide laser it is even possible to achieve quasisingle longitudinal-mode operation. Here we show that by a straightforward Fourier analysis of a sub-threshold laser spectrum we can extract the complex reflectivities of an internal scatterer.


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    Titel :

    Reflectivity measurements of internal cavity defects in semiconductor laser diodes


    Beteiligte:
    Lambkin, P. (Autor:in) / Percival, C. (Autor:in) / Corbett, B. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    125366 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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