The presence of defects inside the cavity of a semiconductor laser can have a very strong influence on the emission spectrum. The resulting output spectrum can become highly modulated even in the presence of a single defect. By carefully positioning a limited number of defects, for example by etching slots into a ridge waveguide laser it is even possible to achieve quasisingle longitudinal-mode operation. Here we show that by a straightforward Fourier analysis of a sub-threshold laser spectrum we can extract the complex reflectivities of an internal scatterer.
Reflectivity measurements of internal cavity defects in semiconductor laser diodes
01.01.2003
125366 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Reflectivity Measurements of Internal Cavity Defects in Semiconductor Laser Diodes
British Library Conference Proceedings | 2003
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