Monolithic integrated DFB laser-modulator devices (EML) based on the double-type MQW stack are studied. First experimental results on optimization strategies for high-speed double stack EMLs are presented. The small-signal 3 dB bandwidth is improved, with respect to that previous device design, by more than a factor of two, up to the 40 GHz regime. This is done by decreasing the additional pin-junction capacitance in the EAM section by mesa width shrinkage and replacing the n-type InP substrate by a si-type one. Thus, the novel double-stack EML approach, fabricated in the InGaAlAs-InP material system, has the potential to meet the requirements of future 40 Gbps optoelectronic transceivers.
40 GHz monolithic integrated 1.3 /spl mu/m InGaAlAs-InP laser-modulator with double-stack MQW layer structure
2004-01-01
137388 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2004
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