Monolithic integrated DFB laser-modulator devices (EML) based on the double-type MQW stack are studied. First experimental results on optimization strategies for high-speed double stack EMLs are presented. The small-signal 3 dB bandwidth is improved, with respect to that previous device design, by more than a factor of two, up to the 40 GHz regime. This is done by decreasing the additional pin-junction capacitance in the EAM section by mesa width shrinkage and replacing the n-type InP substrate by a si-type one. Thus, the novel double-stack EML approach, fabricated in the InGaAlAs-InP material system, has the potential to meet the requirements of future 40 Gbps optoelectronic transceivers.


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    Titel :

    40 GHz monolithic integrated 1.3 /spl mu/m InGaAlAs-InP laser-modulator with double-stack MQW layer structure


    Beteiligte:
    Knodl, T. (Autor:in) / Hanke, C. (Autor:in) / Saravanan, B.K. (Autor:in) / Peschke, M. (Autor:in) / Macaluso, R. (Autor:in) / Stegmuller, B. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    137388 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    40 GHz Monolithic Integrated 1.3 mum InGaAlAs-InP Laser-Modulator with Double-Stack MQW Layer Structure

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004


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