Technology of GaSb-based type-I quantum-well lasers is considered. The role of quantum-well strain in determining device injection efficiency, differential gain and contribution of Auger recombination to threshold current is discussed.


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    Title :

    Mid-IR room temperature operated GaSb-based lasers and laser arrays


    Contributors:
    Belenky, G. (author) / Kim, J.G. (author) / Shterengas, L. (author) / Martinelli, R.U. (author)


    Publication date :

    2004-01-01


    Size :

    94706 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Mid-IR Room Temperature Operated GaSb-based Lasers and Laser Arrays

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004




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