Technology of GaSb-based type-I quantum-well lasers is considered. The role of quantum-well strain in determining device injection efficiency, differential gain and contribution of Auger recombination to threshold current is discussed.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Mid-IR room temperature operated GaSb-based lasers and laser arrays


    Beteiligte:
    Belenky, G. (Autor:in) / Kim, J.G. (Autor:in) / Shterengas, L. (Autor:in) / Martinelli, R.U. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    94706 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Mid-IR Room Temperature Operated GaSb-based Lasers and Laser Arrays

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004




    Continuous-Wave Operation of GaInAsSb/GaSb Type-II Quantum Well Lasers Near Room Temperature

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998