Technology of GaSb-based type-I quantum-well lasers is considered. The role of quantum-well strain in determining device injection efficiency, differential gain and contribution of Auger recombination to threshold current is discussed.
Mid-IR room temperature operated GaSb-based lasers and laser arrays
01.01.2004
94706 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Mid-IR Room Temperature Operated GaSb-based Lasers and Laser Arrays
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