The optically pumped lasing action at 414 nm was obtained from a GaN-based VCSEL with an InGaN multiple quantum wells and two dielectric DBRs fabricated by laser lift-off. The threshold pumping energy is 270 nJ at room temperature conditions.
Optically pumped GaN-based vertical cavity surface emitting laser at room temperature
2005-01-01
180144 byte
Conference paper
Electronic Resource
English
WZ1 Optically-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers
British Library Conference Proceedings | 2002
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