The optically pumped lasing action at 414 nm was obtained from a GaN-based VCSEL with an InGaN multiple quantum wells and two dielectric DBRs fabricated by laser lift-off. The threshold pumping energy is 270 nJ at room temperature conditions.


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    Title :

    Optically pumped GaN-based vertical cavity surface emitting laser at room temperature


    Contributors:
    Jung-Tang Chu, (author) / Liang, W.D. (author) / Kao, C.C. (author) / Huang, H.W. (author) / Lu, T.C. (author) / Kuo, H.C. (author) / Wang, S.C. (author)


    Publication date :

    2005-01-01


    Size :

    180144 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English