We have made InGaNAs light-emitting diodes for fiber-optic applications at 1.3 /spl mu/m. The epitaxial layers grown on the n-GaAs substrates in a MOCVD system P-type metal grid lines were formed on the light-emitting aperture for current spreading. A maximum optical power of 0.84 mW was measured at 300 mA. The device characteristics were measured and analyzed.


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    Title :

    Characteristics of 1.3 /spl mu/m InGaNAs light-emitting diodes


    Contributors:
    Yang, H.-P.D. (author) / Chen-Ming Lu, (author) / Livchits, D. (author) / Lin, G. (author) / I-Fan Chen, (author) / Tsin-Dong Lee, (author) / Chi, J.Y. (author)


    Publication date :

    2003-01-01


    Size :

    75846 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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