We have demonstrated the occurrence of the field-assisted etching of pits on the back surface of ELO AlGaAs-GaAs MSMs. The etching causes an increase in the leakage current of the MSM and therefore creates a reliability problem for ELO technology. The etching may possibly be circumvented through the use of LT material or better attachment processes.<>


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    Title :

    Degradation of epitaxial lift-off AlGaAs/GaAs metal-semiconductor-metal photodetectors due to field assisted etching


    Contributors:
    Hargis, M.C. (author) / Drabik, T.J. (author) / Woodall, J.M. (author)

    Published in:

    Publication date :

    1993-01-01


    Size :

    218438 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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