We have demonstrated the occurrence of the field-assisted etching of pits on the back surface of ELO AlGaAs-GaAs MSMs. The etching causes an increase in the leakage current of the MSM and therefore creates a reliability problem for ELO technology. The etching may possibly be circumvented through the use of LT material or better attachment processes.<>


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    Titel :

    Degradation of epitaxial lift-off AlGaAs/GaAs metal-semiconductor-metal photodetectors due to field assisted etching


    Beteiligte:
    Hargis, M.C. (Autor:in) / Drabik, T.J. (Autor:in) / Woodall, J.M. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    218438 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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