We have demonstrated the occurrence of the field-assisted etching of pits on the back surface of ELO AlGaAs-GaAs MSMs. The etching causes an increase in the leakage current of the MSM and therefore creates a reliability problem for ELO technology. The etching may possibly be circumvented through the use of LT material or better attachment processes.<>
Degradation of epitaxial lift-off AlGaAs/GaAs metal-semiconductor-metal photodetectors due to field assisted etching
Proceedings of LEOS '93 ; 208-209
01.01.1993
218438 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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