Summary form only given. Metal semiconductor metal (MSM) photodetectors were fabricated from epitaxial material containing low temperature (LT) AlGaAs window (or cladding) layers and tested. Due to the high resistivity of the LT-AlGaAs, the epitaxial lift off (ELO)-NP MSM performs comparably to its on-wafer complement.


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    Titel :

    Low-temperature AlGaAs-GaAs epitaxial lift-off metal-semiconductor-metal photodetector


    Beteiligte:
    Hargis, M.C. (Autor:in) / Drabik, T.J. (Autor:in) / Woodall, J.M. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 50-51 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    179610 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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