We proposed a new type of 1550 nm VCSEL incorporating proton implantation and a dielectric mirror. Even though it suffers from poor heat removal rate, it could be a promising structure since the structure and fabrication scheme rely on stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1550 nm. The use of flip-chip bonding and good choice of dielectric material may improve the overall laser performance.


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    Title :

    Long wavelength VCSEL using ion-implantation and dielectric mirror


    Contributors:


    Publication date :

    2002-01-01


    Size :

    105985 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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