We proposed a new type of 1550 nm VCSEL incorporating proton implantation and a dielectric mirror. Even though it suffers from poor heat removal rate, it could be a promising structure since the structure and fabrication scheme rely on stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1550 nm. The use of flip-chip bonding and good choice of dielectric material may improve the overall laser performance.
Long wavelength VCSEL using ion-implantation and dielectric mirror
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 695-696 vol.2
01.01.2002
105985 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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